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TSC80251G2D-24CB 参数 Datasheet PDF下载

TSC80251G2D-24CB图片预览
型号: TSC80251G2D-24CB
PDF下载: 下载PDF文件 查看货源
内容描述: 8位/ 16位微控制器,串行通信接口 [8/16-bit Microcontroller with Serial Communication Interfaces]
分类和应用: 微控制器外围集成电路异步传输模式ATM通信时钟
文件页数/大小: 63 页 / 813 K
品牌: TEMIC [ TEMIC SEMICONDUCTORS ]
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TSC80251G2D  
8. Programming and Verifying Non-Volatile Memory  
8.1 Internal Features  
The internal non-volatile memory of the TSC80251G2D derivatives contains five different areas:  
Code Memory  
Configuration Bytes  
Lock Bits  
Encryption Array  
Signature Bytes  
8.1.1 EPROM/OTPROM Devices  
All the internal non-volatile memory but the Signature Bytes of the TSC87251G2D products is made of EPROM  
cells. The Signature Bytes of the TSC87251G2D products are made of Mask ROM.  
The TSC87251G2D products are programmed and verified in the same manner as TEMIC’s TSC87251G1A, using  
a SINGLE-PULSE algorithm, which programs at V = 12.75V using only one 100 µs pulse per byte. This results  
PP  
in a programming time of less than 10 seconds for the 32 Kbytes on-chip code memory.  
(1)  
The EPROM of the TSC87251G2D products in Window package is erasable by Ultra-Violet radiation (UV).  
UV erasure set all the EPROM memory cells to one and allows a reprogramming. The quartz window must be  
(2)  
covered with an opaque label when the device is in operation. This is not so much to protect the EPROM array  
from inadvertent erasure, as to protect the RAM and other on-chip logic. Allowing light to impinge on the silicon  
die during device operation may cause a logical malfunction.  
The TSC87251G2D products in plastic packages are One Time Programmable (OTP). Then an EPROM cell cannot  
be reset by UV once programmed to zero.  
Notes:  
2
1. The recommended erasure procedure is exposure to ultra-violet light (at 2537 Å) to an integrated dose of at least 20 W-sec/cm . Exposing  
2
the EPROM to an ultra-violet lamp of 12000 µW/cm rating for 30 minutes should be sufficient.  
2. Erasure of the EPROM begins to occur when the chip is exposed to light wavelength shorter than 4000 Å. Since sunlight and fluorescent  
light have wavelength in this range, exposure to these light sources over an extended time (1 week in sunlight or 3 years in room-level  
fluorescent lighting) could cause inadvertent erasure.  
8.1.2 Mask ROM Devices  
All the internal non-volatile memory of TSC83251G2D products is made of Mask ROM cells. They can only be  
verified by the user, using the same algorithm as the EPROM/OTPROM devices.  
8.1.3 ROMless Devices  
The TSC80251G2D products do not include on-chip Configuration Bytes, Code Memory and Encryption Array.  
They only include Signature Bytes made of Mask ROM cells which can be read using the same algorithm as the  
EPROM/OTPROM devices.  
8.2 Security Features  
In some microcontrollers applications, it is desirable that the user’s program code be secured from unauthorized  
access. The TSC83251G2D and TSC87251G2D offer two kinds of protection for program code stored in the on-  
chip array:  
Program code in the on-chip Code Memory is encrypted when read out for verification if the Encryption Array is  
programmed.  
A three-level lock bit system restricts external access to the on-chip code memory.  
Rev. A - May 7, 1999  
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