VND5012AK-E
ELECTRICAL CHARACTERISTICS (continued)
Table 8. Logic Input
Symbol
Parameter
Test Conditions
Min.
Typ.
-0.7
-0.7
Max.
Unit
V
V
I
Input low level voltage
Low level input current
Input high level voltage
High level input current
Input hysteresis voltage
0.9
IL
V =0.9 V
1
µA
V
IL
IN
V
IH
2.1
I
IH
V = 2.1 V
10
TBD
0.9
µA
V
IN
V
I(hyst)
0.25
5.5
I =1mA
IN
V
V
ICL
Input clamp voltage
I =-1mA
IN
V
V
I
CS_DIS low level voltage
Low level CS_DIS current
CS_DIS high level voltage
High level CS_DIS current
CS_DIS hysteresis voltage
V
CSDL
V
V
= 0.9V
1
µA
V
CSDL
CSD
CSD
V
2.1
CSDH
CSDH
I
= 2.1 V
10
µA
V
V
0.25
5.5
CSD(hyst)
I
I
=1mA
TBD
V
CSD
V
CSCL
CS_DIS clamp voltage
=-1mA
V
CSD
Table 9. Protections and Diagnostics (see note 2)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
=13V
40
60
80
80
A
A
CC
I
DC Short circuit current
limH
5V<V <36V
CC
Short circuit current
during thermal cycling
I
V
CC
=13V; T <T <T
TSD
24
A
limL
R
j
T
Shutdown temperature
Reset temperature
150
175
200
°C
°C
°C
TSD
T
T
+ 1
T
+ 5
RS
R
RS
T
Thermal reset of STATUS
Thermal hysteresis
135
RS
T
7
°C
V
HYST
(T
-T )
R
TSD
I
I
=2A; V =0; L=6mH
OUT
IN
Turn-off output voltage
clamp
V
V
-41
V
-46
V
-52
DEMAG
CC
CC
CC
Output voltage drop
limitation
=0.4A
OUT
V
25
mV
ON
T = -40°C...+150°C (see fig. 9)
j
Note: 2. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be
used together with a proper software strategy. If the device operates under abnormal conditions this software must limit the duration
and number of activation cycles.
5/13
STMICROELECTRONICS [ ST ]
