VND5012AK-E
ELECTRICAL CHARACTERISTICS (8V<V <36V; -40°C<T <150°C, unless otherwise specified)
CC
j
Table 6. Power Section
Symbol
Parameter
Test Conditions
Min.
Typ.
13
3
Max.
36
Unit
V
V
CC
Operating supply voltage
Undervoltage shutdown
4.5
V
USD
4.5
V
Undervoltage shut-down
hysteresis
V
0.5
V
USDhyst
I
I
I
=5A; T =25°C
12
24
16
mΩ
mΩ
mΩ
OUT
OUT
OUT
j
R
On state resistance
Clamp Voltage
Supply current
=5A; T =150°C
ON
j
=5A; V =5V; T =25°C
CC
j
V
clamp
I =20 mA
S
41
46
52
V
Off State; V =13V; T =25°C;
V =V
CC
j
=V
=V
=0V
I
IN
OUT
SENSE
CSD
2(**)
3
5(**)
6
µA
mA
S
On State; V =13V; V =5V; I
=0A
OUT
CC
IN
V =V
=0V; V =13V; T =25°C
0
0
3
5
IN
OUT
CC
j
I
Off state output current
µA
L(off)
V =V
=0V; V =13V; T =125°C
CC j
IN
OUT
Note: (**) PowerMOS leakage included
Table 7. Switching (V =13V)
CC
Symbol
Parameter
Turn-on delay time
Turn-off delay time
Turn-on voltage slope
Turn-off voltage slope
Test Conditions
Min.
Typ.
15
Max.
Unit
µs
t
R =2.6Ω
d(on)
L
t
R =2.6Ω
L
40
µs
d(off)
(dV
/dt)
/dt)
R =2.6Ω
L
0.3
0.35
V/µs
V/µs
OUT
on
(dV
R =2.6Ω
L
OUT
off
Switching energy losses at
turn-on
W
R =2.6Ω
TBD
TBD
mJ
mJ
ON
L
Switching energy losses at
turn-off
W
R =2.6Ω
L
OFF
4/13
STMICROELECTRONICS [ ST ]
