USBLC6-2
Table 2: Absolute Ratings
Symbol
Parameter
Value
Unit
At device level:
15
15
25
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
MIL STD883C-Method 3015-6
VPP
Peak pulse voltage
kV
Tstg
Tj
Storage temperature range
-55 to +150
125
°C
°C
°C
Maximum junction temperature
TL
Lead solder temperature (10 seconds duration)
260
Table 3: Electrical Characteristics (Tamb = 25°C)
Value
Symbol
Parameter
Test Conditions
Unit
Min.
Typ. Max.
VRM
IRM
Reverse stand-off voltage
Leakage current
5
1
V
VRM = 5V
µA
Breakdown voltage between VBUS
and GND
VBR
VF
IF = 1mA
6
V
V
V
IF = 10mA
Forward voltage
1.1
12
IPP = 1A, tp = 8/20µs
Any I/O pin to GND
VCL
Clamping voltage
IPP = 5A, tp = 8/20µs
17
V
Any I/O pin to GND
V = 0V F = 1MHz
any I/O pin to GND
Ci/o-GND
Capacitance between I/O and GND
Capacitance between I/O
2.5
1.2
3.5
pF
∆Ci/o-GND
0.04
V = 0V F = 1MHz
between I/O, GND
not connected
Ci/o-i/o
1.7
pF
∆Ci/o-i/o
0.04
2/11
STMICROELECTRONICS [ ST ]
