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T1250-600G 参数 Datasheet PDF下载

T1250-600G图片预览
型号: T1250-600G
PDF下载: 下载PDF文件 查看货源
内容描述: 12一Snubberlessâ ?? ¢ ,逻辑电平标准三端双向可控硅 [12 A Snubberless™, logic level and standard triacs]
分类和应用: 触发装置可控硅三端双向交流开关
文件页数/大小: 12 页 / 140 K
品牌: STMICROELECTRONICS [ ST ]
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Characteristics  
BTA12, BTB12, T12xx  
Figure 1.  
Maximum power dissipation versus Figure 2.  
RMS on-state current (full cycle)  
RMS on-state current versus case  
temperature (full cycle)  
P(W)  
I (A)  
T(RMS)  
16  
14  
13  
12  
11  
10  
9
BTB / T12  
14  
12  
10  
8
BTA  
8
7
6
6
5
4
4
3
2
2
I (A)  
T(RMS)  
1
T (°C)  
C
0
0
0
25  
50  
75  
100  
125  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
Figure 3.  
RMS on-state current versus  
ambient temperature (printed  
circuit board FR4, copper  
thickness: 35µm) (full cycle)  
Figure 4.  
Relative variation of thermal  
impedance versus pulse duration  
I
(A)  
T(RMS)  
K=[Z /R  
]
th th  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1E+0  
1E-1  
1E-2  
D2PAK  
Z
th(j-c)  
(S=1cm2)  
Z
th(j-a)  
T (°C)  
C
t (s)  
p
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2  
5E+2  
0
25  
50  
75  
100  
125  
Figure 5.  
On-state characteristics (maximum Figure 6.  
values)  
Surge peak on-state current versus  
number of cycles  
I
(A)  
TM  
I (A)  
TSM  
100  
130  
120  
110  
100  
90  
Tj max.  
Vto = 0.85V  
Rd = 35 mΩ  
t=20ms  
One cycle  
Tj = Tj max.  
Non repetitive  
Tj initial=25°C  
80  
70  
Tj = 25°C.  
10  
60  
Repetitive  
TC=90°C  
50  
40  
30  
20  
10  
V
(V)  
TM  
Number of cycles  
0
1
1
10  
100  
1000  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
4/12  
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