STF/I/P/U/W13NM60N
Electrical characteristics
Min. Typ. Max. Unit
Table 7.
Symbol
Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
3
8
ns
ns
ns
ns
VDD = 300 V, ID = 5.5 A
RG = 4.7 ΩVGS = 10 V
-
-
Turn-off delay time
Fall time
30
10
(see Figure 19)
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max. Unit
ISD
Source-drain current
11
44
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 11 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/µs
VDD = 100 V
230
2
ns
µC
A
Qrr
-
-
IRRM
(see Figure 21)
18
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/µs
290
190
17
ns
µC
A
Qrr
VDD = 100 V, Tj = 150 °C
IRRM
(see Figure 21)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15420 Rev 5
5/21
STMICROELECTRONICS [ ST ]
