Electrical characteristics
STF/I/P/U/W13NM60N
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
ID = 1 mA
Min. Typ. Max. Unit
Drain-source
V(BR)DSS
600
V
breakdown voltage (VGS = 0)
Zero gate voltage
V
DS = 600 V
1
µA
µA
IDSS
drain current (VGS = 0)
VDS = 600 V, TC=125 °C
100
Gate-body leakage
current (VDS = 0)
IGSS
VGS
VDS = VGS, ID = 250 µA
GS = 10 V, ID = 5.5 A
=
25 V
0.1
4
µA
V
VGS(th) Gate threshold voltage
2
3
Static drain-source
RDS(on)
V
0.28 0.36
Ω
on-resistance
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Input capacitance
Output capacitance
Ciss
Coss
Crss
790
60
pF
pF
pF
VDS = 50 V, f = 1 MHz,
VGS = 0
-
-
-
Reverse transfer
capacitance
3.6
Equivalent output
capacitance
(1)
Coss eq.
VGS = 0, VDS = 0 to 480 V
135
-
-
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 11 A,
VGS = 10 V,
27
4
nC
nC
nC
-
-
(see Figure 20)
14
RG
Gate input resistance
f=1 MHz open drain
4.7
-
Ω
1.
C
is defined as a constant equivalent capacitance giving the same charging time as C
when V
DS
oss eq.
oss
increases from 0 to 80% V
DS
4/21
Doc ID 15420 Rev 5
STMICROELECTRONICS [ ST ]
