STF/I/P/U/W13NM60N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TO-220FP I²PAK, TO-220, IPAK, TO-247
VDS
VGS
Drain-source voltage
Gate-source voltage
600
25
V
V
Drain current (continuous) at
TC = 25 °C
ID
11(1)
11
A
A
Drain current (continuous) at
TC = 100 °C
ID
6.93(1)
6.93
(2)
IDM
Drain current (pulsed)
44(1)
25
44
90
A
W
PTOT
Total dissipation at TC = 25 °C
dv/dt (3) Peak diode recovery voltage slope
15
V/ns
Insulation withstand voltage (RMS)
VISO
from all three leads to external heat
sink (t=1 s;TC=25 °C)
2500
V
Tstg
Tj
Storage temperature
- 55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3.
I
≤11 A, di/dt ≤ 400 A/µs, V
≤ V
, V = 80% V
(BR)DSS.
SD
DS peak
(BR)DSS
DD
Table 3.
Symbol
Thermal data
Value
I²PAK
Parameter
Unit
TO-220FP
IPAK TO-247
TO-220
Rthj-case Thermal resistance junction-case max
5
1.39
°C/W
°C/W
Thermal resistance junction-ambient
Rthj-amb
max
62.5
62.5
100
50
Table 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
IAS
3.5
A
Single pulse avalanche energy
EAS
200
mJ
(starting TJ=25 °C, ID=IAS, VDD=50 V)
Doc ID 15420 Rev 5
3/21
STMICROELECTRONICS [ ST ]
