STM8S903K3 STM8S903F3
Electrical characteristics
10.3.5
Memory characteristics
RAM and hardware registers
Table 38: RAM and hardware registers
Symbol
Parameter
Conditions
Min
Unit
(2)
VRM
Data retention mode(1)
VIT-max
Halt mode (or reset)
V
(1) Minimum supply voltage without losing data stored in RAM (in halt mode or under reset)
or in hardware registers (only in halt mode). Guaranteed by design, not tested in production.
(2) Refer to the Operating conditions section for the value of VIT-max
Flash program memory/data EEPROM memory
Table 39: Flash program memory/data EEPROM memory
Symbol Parameter
Conditions
Typ
Max
Unit
Min(1)
VDD Operating voltage
(all modes, execution/
write/erase)
fCPU ≤ 16 MHz
2.95
-
5.5
V
tprog
Standard programming time
(including erase) for
-
6
6.6
byte/word/block (1 byte/
4 bytes/64 bytes)
ms
Fast programming time for
1 block (64 bytes)
-
-
3
3
-
3.33
terase
Erase time for 1 block
(64 bytes)
3.33
NRW
Erase/write cycles(2)
(program memory)
TA = +85 °C
10 k
300 k
-
-
cycles
Erase/write cycles
(data memory)(2)
TA = +125 °C
1 M
tRET
Data retention (program
and data memory) after 10k
erase/write cycles at
TA = +55 °C
TRET = 55°C
20
-
-
years
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