STM8S903K3 STM8S903F3
Rm: Notional resistance (see crystal specification)
Electrical characteristics
Lm: Notional inductance (see crystal specification)
Cm: Notional capacitance (see crystal specification)
Co: Shunt capacitance (see crystal specification)
CL1= CL2 = C: Grounded external capacitance
gm >> gmcrit
10.3.4
Internal clock sources and timing characteristics
Subject to general operating conditions for VDD and TA.
High speed internal RC oscillator (HSI)
Table 36: HSI oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
16
Max
Unit
MHz
fHSI
Frequency
-
-
-
ACCHSI
Accuracy of HSI User-trimmed with
oscillator CLK_HSITRIMR register for
1.0(3)
-
given VDD and TA
conditions(1)
Accuracy of HSI VDD = 5 V, TA = 25°C(2)
oscillator (factory
-1
-
-
1
%
VDD = 5 V,
calibrated)
-2.0
2.0
25 °C ≤ TA ≤ 85 °C
2.95 ≤ VDD≤ 5.5 V,
-3.0(2)
3.0(2)
-
-
-40 °C ≤ TA ≤ 125 °C
tsu(HSI)
HSI oscillator
wakeup time
including
1.0(3)
-
-
μs
calibration
IDD(HSI)
HSI oscillator
power
250(2)
170
μA
consumption
(1) Refer to application note.
(2) Data based on characterization results, not tested in production.
(3) Guaranteed by design, not tested in production.
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