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STM32F103RCY7XXX 参数 Datasheet PDF下载

STM32F103RCY7XXX图片预览
型号: STM32F103RCY7XXX
PDF下载: 下载PDF文件 查看货源
内容描述: 高密度高性能线的基于ARM的32位MCU,具有256至512KB闪存, USB , CAN ,11个定时器, 3的ADC ,13个通信接口 [High-density performance line ARM-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces]
分类和应用: 闪存通信
文件页数/大小: 123 页 / 1691 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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STM32F103xC, STM32F103xD, STM32F103xE
Prequalification trials
Electrical characteristics
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 42.
Symbol
EMI characteristics
Parameter
Conditions
Monitored
frequency band
Max vs. [f
HSE
/f
HCLK
]
Unit
8/48 MHz 8/72 MHz
8
31
28
4
12
21
33
4
-
dBµV
S
EMI
Peak level
0.1 to 30 MHz
V
DD
�½3.3
V, T
A
�½25
°C,
30 to 130 MHz
LQFP144 package
compliant with IEC
130 MHz to 1GHz
61967-2
SAE EMI Level
5.3.12
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 43.
Symbol
V
ESD(HBM)
V
ESD(CDM)
ESD absolute maximum ratings
Ratings
Conditions
Class Maximum value
(1)
Unit
2000
V
500
Electrostatic discharge
T
A
�½+25
°C, conforming
2
voltage (human body model) to JESD22-A114
Electrostatic discharge
T
A
�½+25
°C, conforming
II
voltage (charge device model) to JESD22-C101
1. Based on characterization results, not tested in production.
Doc ID 14611 Rev 7
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