欢迎访问ic37.com |
会员登录 免费注册
发布采购

STM32F103RCY7XXX 参数 Datasheet PDF下载

STM32F103RCY7XXX图片预览
型号: STM32F103RCY7XXX
PDF下载: 下载PDF文件 查看货源
内容描述: 高密度高性能线的基于ARM的32位MCU,具有256至512KB闪存, USB , CAN ,11个定时器, 3的ADC ,13个通信接口 [High-density performance line ARM-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces]
分类和应用: 闪存通信
文件页数/大小: 123 页 / 1691 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
 浏览型号STM32F103RCY7XXX的Datasheet PDF文件第75页浏览型号STM32F103RCY7XXX的Datasheet PDF文件第76页浏览型号STM32F103RCY7XXX的Datasheet PDF文件第77页浏览型号STM32F103RCY7XXX的Datasheet PDF文件第78页浏览型号STM32F103RCY7XXX的Datasheet PDF文件第80页浏览型号STM32F103RCY7XXX的Datasheet PDF文件第81页浏览型号STM32F103RCY7XXX的Datasheet PDF文件第82页浏览型号STM32F103RCY7XXX的Datasheet PDF文件第83页  
STM32F103xC, STM32F103xD, STM32F103xE
Electrical characteristics
Figure 41. NAND controller waveforms for common memory write access
FSMC_NCEx
Low
ALE (FSMC_A17)
CLE (FSMC_A16)
t
d(ALE-NOE)
FSMC_NWE
t
w(NWE)
t
h(NOE-ALE)
FSMC_NOE
t
d(D-NWE)
t
v(NWE-D)
FSMC_D[15:0]
t
h(NWE-D)
ai14913b
Table 40.
Symbol
t
d(D-NWE)(2)
t
w(NOE)(2)
t
su(D-NOE)(2)
t
h(NOE-D)(2)
t
w(NWE)(2)
t
v(NWE-D)(2)
t
h(NWE-D)(2)
Switching characteristics for NAND Flash read and write cycles
(1)
Parameter
FSMC_D[15:0] valid before FSMC_NWE high
FSMC_NOE low width
FSMC_D[15:0] valid data before FSMC_NOE
high
Min
6T
HCLK
+ 12
4T
HCLK
– 1.5 4T
HCLK
+ 1.5
25
Max
Unit
ns
ns
ns
ns
4T
HCLK
+ 2.5
0
10T
HCLK
+ 4
3T
HCLK
+ 1.5
3T
HCLK
+ 4.5
3T
HCLK
+ 2
3T
HCLK
+ 4.5
ns
ns
ns
ns
ns
ns
ns
FSMC_D[15:0] valid data after FSMC_NOE high 7
FSMC_NWE low width
FSMC_NWE low to FSMC_D[15:0] valid
FSMC_NWE high to FSMC_D[15:0] invalid
4T
HCLK
– 1
t
d(ALE-NWE)(3)
FSMC_ALE valid before FSMC_NWE low
t
h(NWE-ALE)(3)
FSMC_NWE high to FSMC_ALE invalid
t
d(ALE-NOE)(3)
FSMC_ALE valid before FSMC_NOE low
t
h(NOE-ALE)(3)
FSMC_NWE high to FSMC_ALE invalid
1. C
L
= 15 pF.
2. Based on characterization, not tested in production.
3. Guaranteed by design, not tested in production.
Doc ID 14611 Rev 7
79/123