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STM32F100C8T6BTR 参数 Datasheet PDF下载

STM32F100C8T6BTR图片预览
型号: STM32F100C8T6BTR
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内容描述: 低和中等密度值线,先进的基于ARM的32位MCU低和中等密度值线,先进的基于ARM的32位MCU [Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU]
分类和应用:
文件页数/大小: 84 页 / 1148 K
品牌: STMICROELECTRONICS [ ST ]
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Electrical characteristics  
STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB  
negative currents.  
Any positive injection current within the limits specified for I  
and I  
in  
INJ(PIN)  
INJ(PIN)  
Section 5.3.12 does not affect the ADC accuracy.  
Figure 31. ADC accuracy characteristics  
V
V
DDA  
REF+  
[1LSB  
=
(or  
depending on package)]  
IDEAL  
4096  
4096  
EG  
(1) Example of an actual transfer curve  
(2) The ideal transfer curve  
4095  
4094  
4093  
(3) End point correlation line  
(2)  
ET=Total Unadjusted Error: maximum deviation  
ET  
between the actual and the ideal transfer curves.  
(3)  
7
6
5
4
3
2
1
EO=Offset Error: deviation between the first actual  
transition and the first ideal one.  
(1)  
EG=Gain Error: deviation between the last ideal  
transition and the last actual one.  
EO  
EL  
ED=Differential Linearity Error: maximum deviation  
between actual steps and the ideal one.  
EL=Integral Linearity Error: maximum deviation  
between any actual transition and the end point  
correlation line.  
ED  
1 LSBIDEAL  
0
1
2
3
4
5
6
7
4093 4094 4095 4096  
VDDA  
VSSA  
ai14395b  
Figure 32. Typical connection diagram using the ADC  
STM32F10xxx  
V
DD  
Sample and hold ADC  
V
0.6 V  
T
converter  
(1)  
C
(1)  
R
R
AIN  
ADC  
AINx  
12-bit  
converter  
V
T
V
AIN  
0.6 V  
C
(1)  
ADC  
parasitic  
I
1 µA  
L
ai14139d  
1. Refer to Table 41 for the values of RAIN, RADC and CADC  
.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the  
pad capacitance (roughly 7 pF). A high Cparasitic value will downgrade conversion accuracy. To remedy  
this, fADC should be reduced.  
General PCB design guidelines  
Power supply decoupling should be performed as shown in Figure 33 or Figure 34,  
depending on whether V  
is connected to V  
or not. The 10 nF capacitors should be  
REF+  
DDA  
ceramic (good quality). They should be placed them as close as possible to the chip.  
68/84  
Doc ID 16455 Rev 2  
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