Electrical characteristics
STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
negative currents.
Any positive injection current within the limits specified for I
and I
in
INJ(PIN)
INJ(PIN)
Section 5.3.12 does not affect the ADC accuracy.
Figure 31. ADC accuracy characteristics
V
V
DDA
REF+
[1LSB
=
(or
depending on package)]
IDEAL
4096
4096
EG
(1) Example of an actual transfer curve
(2) The ideal transfer curve
4095
4094
4093
(3) End point correlation line
(2)
ET=Total Unadjusted Error: maximum deviation
ET
between the actual and the ideal transfer curves.
(3)
7
6
5
4
3
2
1
EO=Offset Error: deviation between the first actual
transition and the first ideal one.
(1)
EG=Gain Error: deviation between the last ideal
transition and the last actual one.
EO
EL
ED=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
ED
1 LSBIDEAL
0
1
2
3
4
5
6
7
4093 4094 4095 4096
VDDA
VSSA
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Figure 32. Typical connection diagram using the ADC
STM32F10xxx
V
DD
Sample and hold ADC
V
0.6 V
T
converter
(1)
C
(1)
R
R
AIN
ADC
AINx
12-bit
converter
V
T
V
AIN
0.6 V
C
(1)
ADC
parasitic
I
1 µA
L
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1. Refer to Table 41 for the values of RAIN, RADC and CADC
.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (roughly 7 pF). A high Cparasitic value will downgrade conversion accuracy. To remedy
this, fADC should be reduced.
General PCB design guidelines
Power supply decoupling should be performed as shown in Figure 33 or Figure 34,
depending on whether V
is connected to V
or not. The 10 nF capacitors should be
REF+
DDA
ceramic (good quality). They should be placed them as close as possible to the chip.
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Doc ID 16455 Rev 2