Electrical characteristics
STM32F105xx, STM32F107xx
5.3.9
Memory characteristics
Flash memory
The characteristics are given at T = –40 to 105 °C unless otherwise specified.
A
Table 29. Flash memory characteristics
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit
tprog
16-bit programming time TA = –40 to +105 °C
40
20
20
52.5
70
40
40
µs
ms
ms
tERASE Page (1 KB) erase time TA = –40 to +105 °C
tME
Mass erase time
TA = –40 to +105 °C
Read mode
fHCLK = 72 MHz with 2 wait
states, VDD = 3.3 V
20
5
mA
mA
IDD
Supply current
Write / Erase modes
fHCLK = 72 MHz, VDD = 3.3 V
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
50
µA
V
Vprog Programming voltage
2
3.6
1. Guaranteed by design, not tested in production.
Table 30. Flash memory endurance and data retention
Value
Symbol
Parameter
Conditions
Unit
Min(1) Typ
Max
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
NEND Endurance
kcycles
10
1 kcycle(2) at TA = 85 °C
30
10
20
tRET
Data retention 1 kcycle(2) at TA = 105 °C
Years
10 kcycles(2) at TA = 55 °C
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
5.3.10
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
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