Test
STA516B
Figure 6.
Typical single BTL configuration to obtain 320 W @ THD 10 %, RL = 4 W,
VCC = 50 V
(a)
V
L
+3.3V
23
18
N.C.
12µH
100nF
GND-Clean
GND-Reg
17
16
OUT1A
OUT1A
19
20
100nF
FILM
11
10
100nF
X7R
10K
100nF
X7R
680nF
FILM
100nF
OUT1B
OUT1B
OUT2A
OUT2A
22Ω
6.2
1/2W
VDD
VDD
1/2W
21
22
24
4Ω
6.2
1/2W
CONFIG
9
8
330pF
X7R
TH_WAR
PWRDN
FAULT
TH_WAR
OUT2B
OUT2B
28
25
100nF
FILM
3
2
nPWRDN
12µH
10K
V
CC1A
CC1B
27
26
+36V
15
TRI-STATE
IN1A
1µF
2200µF
63V
100nF
X7R
V
29
30
31
32
12
7
IN1B
IN1A
IN1B
VCC2A
IN2A
+36V
IN2B
1µF
X7R
VSS
VSS
VCC2B
33
34
4
14
13
GND1A
GND1B
100nF
X7R
VCCSIGN
35
100nF
X7R
VCCSIGN
GNDSUB
GND2A
GND2B
36
1
6
5
Add.
D04AU1545
Figure 7.
Typical quad half bridge configuration
+VCC
VCC1P
15
C21
2200µF
IN1A
29
M3
M2
M5
M4
R61
5K
IN1A
C31 820µF
L11 22µH
17
16
V
23
24
L
+3.3V
OUTPL
C71
100nF
CONFIG
PWRDN
FAULT
R41
20
C91
1µF
4Ω
OUTPL
PWRDN
25
C81
100nF
14
12
PGND1P
R51
6
R62
5K
C41
330pF
PROTECTIONS
R57
10K
R59
10K
27
26
&
LOGIC
VCC1N
TRI-STATE
C58
100nF
C51
1µF
C61
100nF
11
10
R63
5K
TH_WAR
IN1B
28
30
OUTNL
OUTNL
PGND1N
C32 820µF
L12 22µH
TH_WAR
C72
100nF
R42
20
IN1B
C92
1µF
4Ω
VDD
VDD
VSS
VSS
21
22
33
34
13
7
C82
100nF
R52
6
R64
5K
C42
330pF
REGULATORS
VCC2P
M17
M15
M16
M14
R65
5K
C58
100nF
C53
100nF
C33 820µF
L13 22µH
VCCSIGN
8
9
35
OUTPR
C60
100nF
C73
100nF
R43
20
V
CCSIGN
IN2A
C93
1µF
4Ω
36
31
20
19
OUTPR
C83
100nF
6
4
PGND2P
R53
6
R66
5K
IN2A
IN2B
C43
330pF
GND-Reg
VCC2N
GND-Clean
C52
1µF
C62
100nF
3
2
R67
5K
OUTNR
OUTNR
PGND2N
C34 820µF
L14 22µH
IN2B
32
1
C74
100nF
R44
20
GNDSUB
C94
1µF
4Ω
5
C84
100nF
R54
6
R68
5K
C44
330pF
D03AU1474
For more information, refer to the application note “ST50X and STA51X digital power
amplifiers”.
a. A PWM modulator as driver is required. This result was obtained using the STA30X+STA50X demo board.
10/13
STMICROELECTRONICS [ ST ]
