DC and AC parameters
M95640-W M95640-R M95640-DF
Table 16. DC characteristics (M95640-W, device grade 6)
Test conditions in addition to those
Symbol
Parameter
Min.
Max.
Unit
defined in Table 9
Input leakage
current
ILI
V
IN = VSS or VCC
2
2
µA
µA
Output leakage
current
ILO
S = VCC, VOUT = VSS or VCC
V
CC = 2.5 V, fC = 5 MHz,
C = 0.1 VCC/0.9 VCC, Q = open
CC = 2.5 V, fC = 10 MHz,
3
V
Supply current
(Read)
ICC
2(1)
mA
C = 0.1 VCC/0.9 VCC, Q = open
VCC = 5.5 V, fC = 20 MHz,
5(1)
C = 0.1 VCC/0.9 VCC, Q = open
Supply current
(Write)
(2)
ICC0
During tW, S = VCC, 2.5 V < VCC < 5.5 V
5
3(1)
mA
µA
S = VCC, VCC = 5.5 V
VIN = VSS or VCC
Supply current
(Standby)
S = VCC, VCC = 5.0 V
VIN = VSS or VCC
ICC1
2
S = VCC, VCC = 2.5 V
VIN = VSS or VCC
2(3)
VIL
VIH
VOL
Input low voltage
Input high voltage
–0.45 0.3 VCC
0.7 VCC VCC+1
0.4
V
V
V
Output low voltage IOL = 1.5 mA, VCC = 2.5 V
CC = 2.5 V and IOH = 0.4 mA or
V
VOH
Output high voltage
0.8 VCC
V
VCC = 5 V and IOH = 2 mA
1. Only for the device identified by process letter K.
2. Characterized only, not tested in production.
3. 1 µA with the device identified by process letter P.
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Doc ID 16877 Rev 16
STMICROELECTRONICS [ ST ]
