M95640-W M95640-R M95640-DF
Table 13. Capacitance
DC and AC parameters
Symbol
Parameter
Test conditions(1)
Min.
Max.
Unit
COUT
Output capacitance (Q)
Input capacitance (D)
VOUT = 0 V
VIN = 0 V
VIN = 0 V
8
8
6
pF
pF
pF
CIN
Input capacitance (other pins)
1. Sampled only, not 100% tested, at TA = 25 °C and a frequency of 5 MHz.
Table 14. Cycling performance by groups of four bytes
Symbol
Parameter(1)
Test conditions
Min.
Max.
Unit
TA ≤ 25 °C,
VCC(min) < VCC < VCC(max)
4,000,000
1,200,000
Ncycle
Write cycle endurance(2)
Write cycle(3)
TA = 85 °C,
VCC(min) < VCC < VCC(max)
1. Cycling performance for products identified by process letter K.
2. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1,
4*N+2, 4*N+3] where N is an integer. The Write cycle endurance is defined by characterization and
qualification.
3. A Write cycle is executed when either a Page Write, a Byte Write, a WRSR, a WRID or an LID instruction is
decoded. When using the Byte Write, the Page Write or the WRID instruction, refer also to Section 6.6.1:
Cycling with Error Correction Code (ECC).
Table 15. Memory cell data retention
Parameter
Data retention(1)
Test conditions
TA = 55 °C
Min.
Unit
200
Year
1. For products identified by process letter K. The data retention behavior is checked in production. The 200-
year limit is defined from characterization and qualification results.
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