M25PE10, M25PE20
INSTRUCTIONS
All instructions, addresses and data are shifted in
and out of the device, most significant bit first.
Serial Data Input (D) is sampled on the first rising
edge of Serial Clock (C) after Chip Select (S) is
driven Low. Then, the one-Byte instruction code
must be shifted in to the device, most significant bit
first, on Serial Data Input (D), each bit being
latched on the rising edges of Serial Clock (C).
quence. Chip Select (S) can be driven High after
any bit of the data-out sequence is being shifted
out.
In the case of a Page Write (PW), Page Program
(PP), Page Erase (PE), Sector Erase (SE), Write
Enable (WREN), Write Disable (WRDI), Deep
Power-down (DP) or Release from Deep Power-
down (RDP) instruction, Chip Select (S) must be
driven High exactly at a Byte boundary, otherwise
the instruction is rejected, and is not executed.
That is, Chip Select (S) must driven High when the
number of clock pulses after Chip Select (S) being
driven Low is an exact multiple of eight.
All attempts to access the memory array during a
Write cycle, Program cycle or Erase cycle are ig-
nored, and the internal Write cycle, Program cycle
or Erase cycle continues unaffected.
The instruction set is listed in Table 5.
Every instruction sequence starts with a one-Byte
instruction code. Depending on the instruction,
this might be followed by address Bytes, or by data
Bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read
Data Bytes at Higher Speed (Fast_Read) or Read
Status Register (RDSR) instruction, the shifted-in
instruction sequence is followed by a data-out se-
Table 5. Instruction Set
Address Dummy
Data
Bytes
Instruction
Description
Write Enable
One-Byte Instruction Code
Bytes
Bytes
WREN
WRDI
RDID
0000 0110
0000 0100
1001 1111
0000 0101
0000 0011
0000 1011
0000 1010
0000 0010
1101 1011
1101 1000
1011 1001
1010 1011
06h
04h
9Fh
05h
03h
0Bh
0Ah
02h
DBh
D8h
B9h
ABh
0
0
0
0
3
3
3
3
3
3
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
Write Disable
Read Identification
Read Status Register
Read Data Bytes
1 to 3
1 to ∞
1 to ∞
1 to ∞
1 to 256
1 to 256
0
RDSR
READ
FAST_READ Read Data Bytes at Higher Speed
PW
PP
Page Write
Page Program
PE
Page Erase
SE
Sector Erase
0
DP
Deep Power-down
Release from Deep Power-down
0
RDP
0
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STMICROELECTRONICS [ ST ]
