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M25PE10-VMN6TG 参数 Datasheet PDF下载

M25PE10-VMN6TG图片预览
型号: M25PE10-VMN6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 1和2兆位,低电压,页面可擦除串行闪存产品与字节变性, 33兆赫的SPI总线,标准引脚输出 [1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 37 页 / 483 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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M25PE10, M25PE20
MEMORY ORGANIZATION
The M25PE20 memory is organized as:
1024 pages (256 Bytes each).
262,144 Bytes (8 bits each)
4 sectors (512 Kbits, 65536 Bytes each)
The M25PE10 memory is organized as:
512 pages (256 Bytes each).
131,074 Bytes (8 bits each)
2 sectors (512 Kbits, 65536 Bytes each)
In the M25PE20 and M25PE10, each page can be
individually:
– programmed (bits are programmed from 1 to
0)
– erased (bits are erased from 0 to 1)
– written (bits are changed to either 0 or 1)
The device is Page or Sector Erasable (bits are
erased from 0 to 1).
Table 3. M25PE20 Memory Organization
Sector
3
2
1
0
Address Range
30000h
20000h
10000h
00000h
3FFFFh
2FFFFh
1FFFFh
0FFFFh
Table 4. M25PE10 Memory Organization
Sector
1
0
Address Range
10000h
00000h
1FFFFh
0FFFFh
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