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M25PE10-VMN6TG 参数 Datasheet PDF下载

M25PE10-VMN6TG图片预览
型号: M25PE10-VMN6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 1和2兆位,低电压,页面可擦除串行闪存产品与字节变性, 33兆赫的SPI总线,标准引脚输出 [1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 37 页 / 483 K
品牌: STMICROELECTRONICS [ ST ]
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M25PE10, M25PE20  
MEMORY ORGANIZATION  
The M25PE20 memory is organized as:  
Table 3. M25PE20 Memory Organization  
1024 pages (256 Bytes each).  
262,144 Bytes (8 bits each)  
4 sectors (512 Kbits, 65536 Bytes each)  
Sector  
Address Range  
30000h  
3
2
1
0
3FFFFh  
2FFFFh  
1FFFFh  
0FFFFh  
20000h  
10000h  
00000h  
The M25PE10 memory is organized as:  
512 pages (256 Bytes each).  
131,074 Bytes (8 bits each)  
2 sectors (512 Kbits, 65536 Bytes each)  
Table 4. M25PE10 Memory Organization  
In the M25PE20 and M25PE10, each page can be  
individually:  
Sector  
Address Range  
programmed (bits are programmed from 1 to  
0)  
erased (bits are erased from 0 to 1)  
1
0
10000h  
00000h  
1FFFFh  
0FFFFh  
written (bits are changed to either 0 or 1)  
The device is Page or Sector Erasable (bits are  
erased from 0 to 1).  
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