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M25PE10-VMN6TG 参数 Datasheet PDF下载

M25PE10-VMN6TG图片预览
型号: M25PE10-VMN6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 1和2兆位,低电压,页面可擦除串行闪存产品与字节变性, 33兆赫的SPI总线,标准引脚输出 [1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 37 页 / 483 K
品牌: STMICROELECTRONICS [ ST ]
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M25PE10, M25PE20  
Read Status Register (RDSR)  
WIP bit. The Write In Progress (WIP) bit indicates  
whether the memory is busy with a Write, Program  
or Erase cycle. When set to 1, such a cycle is in  
progress, when reset to 0 no such cycle is in  
progress.  
WEL bit. The Write Enable Latch (WEL) bit indi-  
cates the status of the internal Write Enable Latch.  
When set to 1 the internal Write Enable Latch is  
set, when set to 0 the internal Write Enable Latch  
is reset and no Write, Program or Erase instruction  
is accepted.  
The Read Status Register (RDSR) instruction al-  
lows the Status Register to be read. The Status  
Register may be read at any time, even while a  
Program, Erase or Write cycle is in progress.  
When one of these cycles is in progress, it is rec-  
ommended to check the Write In Progress (WIP)  
bit before sending a new instruction to the device.  
It is also possible to read the Status Register con-  
tinuously, as shown in Figure 11.  
The status bits of the Status Register are as fol-  
lows:  
Figure 11. Read Status Register (RDSR) Instruction Sequence and Data-Out Sequence  
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15  
C
D
Instruction  
Status Register Out  
Status Register Out  
High Impedance  
Q
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
MSB  
MSB  
AI02031E  
15/37  
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