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M25P64-VMF6TP 参数 Datasheet PDF下载

M25P64-VMF6TP图片预览
型号: M25P64-VMF6TP
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位,低电压,串行闪存的50MHz SPI总线接口 [64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 38 页 / 521 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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M25P64
Read Data Bytes at Higher Speed
(FAST_READ)
The device is first selected by driving Chip Select
(S) Low. The instruction code for the Read Data
Bytes at Higher Speed (FAST_READ) instruction
is followed by a 3-byte address (A23-A0) and a
dummy byte, each bit being latched-in during the
rising edge of Serial Clock (C). Then the memory
contents, at that address, is shifted out on Serial
Data Output (Q), each bit being shifted out, at a
maximum frequency f
C
, during the falling edge of
Serial Clock (C).
The instruction sequence is shown in
The first byte addressed can be at any location.
The address is automatically incremented to the
next higher address after each byte of data is shift-
ed out. The whole memory can, therefore, be read
with a single Read Data Bytes at Higher Speed
(FAST_READ) instruction. When the highest ad-
dress is reached, the address counter rolls over to
000000h, allowing the read sequence to be contin-
ued indefinitely.
The Read Data Bytes at Higher Speed
(FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driv-
en High at any time during data output. Any Read
Data Bytes at Higher Speed (FAST_READ) in-
struction, while an Erase, Program or Write cycle
is in progress, is rejected without having any ef-
fects on the cycle that is in progress.
Figure 15. Read Data Bytes at Higher Speed (FAST_READ) Instruction and Data-Out Sequence
S
0
C
Instruction
24 BIT ADDRESS
1
2
3
4
5
6
7
8
9 10
28 29 30 31
D
High Impedance
Q
23 22 21
3
2
1
0
S
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
C
Dummy Byte
D
7
6
5
4
3
2
1
0
DATA OUT 1
DATA OUT 2
1
0
7
MSB
6
5
4
3
2
1
0
7
MSB
AI04006
Q
7
MSB
6
5
4
3
2
Note: Address bit A23 is Don’t Care.
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