1 Characteristics
ACS102-6T
Figure 4. Relative variation of gate trigger
Figure 3. Relative variation of junction to
ambient thermal impedance vs
pulse duration and package
current, holding current and
latching current vs junction
temperature
I
GT, I
H, I [T
K=[Zth(j-a)/Rth(j-a)
]
j] / I
GT, IH, IL
[T =25°
C]
L
j
1.E+00
1.E-01
1.E-02
2.5
2.0
1.5
1.0
0.5
0.0
IGT
IL & IH
TO-92
SO-8
tP (S)
Tj(°C)
10 20 30 40 50 60 70 80 90 100 110 120 130
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
-40 -30 -20 -10
0
Figure 5. Non repetitive surge peak on-state Figure 6. Non repetitive surge peak on-state
current vs number of cycles
current for a sinusoidal pulse with
width tp<10 ms, and corresponding
value of I²t (Tj initial = 25 °C).
I
TSM(A)
ITSM(A), I²t (A²
s)
10
9
8
7
6
5
4
3
2
1
0
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
Tj initial=25°C
t=20ms
One cycle
Non repetitive
Tj initial=25°C
ITSM
Repetitive
amb=100°C
T
I²t
tp(ms)
Number of cycles
1000
0.01
0.10
1.00
10.00
1
10
100
4/11
STMICROELECTRONICS [ ST ]
