1 Characteristics
ACS102-6T
1
Characteristics
Table 1.
Symbol
Absolute maximum ratings (Tamb = 25 °C, unless otherwise specified)
Parameter
Value
Unit
Tamb = 100 °C
Tamb = 100 °C
TO-92
IT(RMS)
RMS on-state current (full sine wave)
0.2
A
SO-08
f = 60 Hz
f = 50 Hz
t = 16.7 ms
t = 20 ms
7.6
7.3
Non repetitive surge peak on-state current
(full cycle sine wave, Tj initial = 25 °C)
ITSM
A
tp = 10 ms
I²t
I²t Value for fusing
0.38
A²s
Critical rate of rise of on-state current
Tj = 125 °C
dI/dt
f = 120 Hz
tp = 20 µs
50
A/µs
I
G = 2xIGT, tr ≤ 100 ns
Non repetitive line peak mains voltage(1)
Peak gate current
VPP
IGM
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
2
1
kV
A
VGM
Peak positive gate voltage
10
0.1
V
PG(AV)
Average gate power dissipation
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
-40 to +150
-30 to +125
°C
1. according to test described by IEC 61000-4-5 standard and Figure 16
Table 2.
Symbol
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
Quadrant
Value
Unit
(1)
II - III
II - III
II - III
MAX
MAX
MIN
5
mA
IGT
VOUT = 12 V, RL = 33 Ω
VGT
0.9
0.15
20
V
V
VGD
VOUT = VDRM, RL =3.3 kΩ, Tj = 125 °C
IOUT = 100 mA
(2)
MAX
mA
IH
(2)
IG = 1.2 x IGT
MAX
MIN
MIN
MIN
25
mA
IL
dV/dt (2)
VOUT = 67% VDRM, gate open, Tj = 125 °C
300
0.15
650
V/µs
A/ms
V
(dI/dt)c (2)
VCL
Without snubber (15 V/µs), turn-off time ≤ 20 ms, Tj = 125 °C
ICL = 0.1 mA, tp = 1 ms, Tj = 125 °C
1. minimum I is guaranteed at 10% of I max
GT
GT
2. for both polarities of OUT referenced to COM
2/11
STMICROELECTRONICS [ ST ]
