ST24/25C02, ST24C02R, ST24/25W02
Figure 2A. DIP Pin Connections
Figure 2B. SO Pin Connections
ST24x02
ST25x02
ST24x02
ST25x02
ST24C02R
ST24C02R
E0
E1
E2
1
2
3
4
8
V
E0
E1
E2
1
2
3
4
8
V
CC
MODE/WC
CC
7
MODE/WC
7
6
5
SCL
6
5
SCL
V
SDA
V
SDA
SS
SS
AI00789D
AI00790E
Table 2. Absolute Maximum Ratings (1)
Symbol
TA
Parameter
Value
Unit
°C
Ambient Operating Temperature
Storage Temperature
–40 to 125
–65 to 150
TSTG
°C
TLEAD
Lead Temperature, Soldering
(SO8 package)
40 sec
215
260
°C
(PSDIP8 package) 10 sec
VIO
Input or Output Voltages
Supply Voltage
–0.6 to 6.5
–0.3 to 6.5
4000
V
V
V
V
VCC
Electrostatic Discharge Voltage (Human Body model) (2)
Electrostatic Discharge Voltage (Machine model) (3)
VESD
500
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings"
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. MIL-STD-883C, 3015.7 (100pF, 1500 Ω).
3. EIAJ IC-121 (Condition C) (200pF, 0 Ω).
DESCRIPTION (cont’d)
tional data bus and serial clock. The memories
carry a built-in 4 bit, unique device identification
code (1010) corresponding to the I2C bus defini-
tion. This is used together with 3 chip enable inputs
(E2, E1, E0) so that up to 8 x 2K devices may be
attached to the I2C bus and selected individually.
The memories behave as a slave device in the I2C
protocol with all memory operations synchronized
by the serial clock. Read and write operations are
initiated by a START condition generated by the
bus master. The START condition is followed by a
stream of 7 bits (identification code 1010), plus one
read/write bit and terminated by an acknowledge
bit.
The ST24/25x02 are 2K bit electrically erasable
programmable memories (EEPROM), organized
as 256 x 8 bits. They are manufactured in SGS-
THOMSON’s Hi-Endurance Advanced CMOS
technology which guarantees an endurance of one
million erase/write cycles with a data retention of
40 years. The memories operate with a power
supplyvalueaslowas1.8VfortheST24C02Ronly.
Both Plastic Dual-in-Line and Plastic Small Outline
packages are available.
The memories are compatible with the I2C stand-
ard, two wire serial interface which uses a bi-direc-
2/16
STMICROELECTRONICS [ ST ]
