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SST25VF064C-80-4C-SAE 参数 Datasheet PDF下载

SST25VF064C-80-4C-SAE图片预览
型号: SST25VF064C-80-4C-SAE
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位的SPI串行双I / O闪存 [64 Mbit SPI Serial Dual I/O Flash]
分类和应用: 闪存
文件页数/大小: 31 页 / 903 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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64 Mbit SPI Serial Dual I/O Flash  
SST25VF064C  
Data Sheet  
Dual-Input Page-Program (50 MHz)  
Dual-Input Page-Program instruction A2H, doubles the  
data input transfer of normal Page-Program instruction and  
supports up to 50MHz. Data to be programmed is entered  
using two I/O pins, SIO1 and SIO0. Prior to the program  
operation the Write-Enable (WREN) instruction must be  
executed. The Dual-Input Page-Program instruction is  
entered by driving CE# low, followed by the instruction  
code, A2H, three address bytes, and at least one data byte  
on serial data inputs SIO1 and SIO0 pins. CE# must be  
driven low for the entire duration of the sequence. The  
Dual-Input Page-Program instruction programs up to 256  
bytes of data in the memory. The selected page address  
must be in the erased state (FFH) before initiating the  
Page-Program operation. A Dual-Input Page-Program  
applied to a protected memory area will be ignored.  
driven high the instruction is executed and the user may  
poll the WEL and Busy bit of the software status register or  
wait TPP for the completion of the internal self-timed Page-  
Program operation. See Figure 10 for the Dual-Input-Page-  
Program sequence.  
For Dual-Input Page-Program, the memory range for the  
SST25VF064C is set in 256 byte page boundaries. The  
device handles shifting of more than 256 bytes of data by  
keeping the last 256 bytes of data shifted as the correct  
data to be programmed. If the target address for the Page-  
Program instruction is not the beginning of the page bound-  
ary (A7-A0 are not all zero) and the number of data input  
exceeds or overlaps the end of the address of the page  
boundary, the excess data inputs will wrap around and will  
be programmed at the start of that target page.  
CE# must be driven high after the seventh and eight bit of  
the last data byte has been latched; otherwise, the dual  
input program instruction is not executed. Once CE# is  
CE#  
MODE 3  
MODE 0  
0
1
2
3
4
5
6
7
8
9
10  
28 29 30 31 32 33 34 35 36 37 28 39 40 41 42 43 44 45 46 47  
SCK  
24-bit Address (1)  
23 22 21  
SIO  
SIO  
0
A2  
3
2
1
0
6
7
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
Data Byte 1 Data Byte 2 Data Byte 3 Data Byte 4  
Data Byte 256  
High Impedance  
1
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
MSB  
MSB  
MSB  
MSB  
MSB  
1392 F31.0  
FIGURE 11: Dual-Input Page-Program  
©2010 Silicon Storage Technology, Inc.  
S71392-04-000  
04/10  
14  
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