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SST25VF064C-80-4C-SAE 参数 Datasheet PDF下载

SST25VF064C-80-4C-SAE图片预览
型号: SST25VF064C-80-4C-SAE
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位的SPI串行双I / O闪存 [64 Mbit SPI Serial Dual I/O Flash]
分类和应用: 闪存
文件页数/大小: 31 页 / 903 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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64 Mbit SPI Serial Dual I/O Flash  
SST25VF064C  
Data Sheet  
the new commands are properly received by the device.  
CE# must be driven low before the RDSR instruction is  
entered and remain low until the status data is read. Read-  
Status-Register is continuous with ongoing clock cycles  
until it is terminated by a low to high transition of the CE#.  
See Figure 16 for the RDSR instruction sequence.  
Read-Status-Register (RDSR)  
The Read-Status-Register (RDSR) instruction allows read-  
ing of the status register. The status register may be read at  
any time even during a Write (Program/Erase) operation.  
When a Write operation is in progress, the Busy bit may be  
checked before sending any new commands to assure that  
CE#  
MODE 3  
MODE 0  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
SCK  
SI  
05  
HIGH IMPEDANCE  
MSB  
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0  
SO  
MSB  
Status  
Register Out  
1392 F17.0  
FIGURE 16: Read-Status-Register (RDSR) Sequence  
Write-Enable (WREN)  
The Write-Enable (WREN) instruction sets the Write-  
Enable-Latch bit in the Status Register to ‘1’ allowing Write  
operations to occur. The WREN instruction must be exe-  
cuted prior to any Write (Program/Erase) operation. The  
WREN instruction may also be used to allow execution of  
the Write-Status-Register (WRSR) instruction; however,  
the Write-Enable-Latch bit in the Status Register will be  
cleared upon the rising edge CE# of the WRSR instruction.  
CE# must be driven high before the WREN instruction is  
executed.  
CE#  
MODE 3  
0
1
2
3
4
5
6
7
SCK  
MODE 0  
06  
SI  
MSB  
HIGH IMPEDANCE  
SO  
1392 F18.0  
FIGURE 17: Write Enable (WREN) Sequence  
©2010 Silicon Storage Technology, Inc.  
S71392-04-000  
04/10  
18  
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