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SST25VF016B_11 参数 Datasheet PDF下载

SST25VF016B_11图片预览
型号: SST25VF016B_11
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位的SPI串行闪存 [16 Mbit SPI Serial Flash]
分类和应用: 闪存
文件页数/大小: 31 页 / 3300 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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16 Mbit SPI Serial Flash  
SST25VF016B  
A Microchip Technology Company  
Data Sheet  
Product Description  
SST’s 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low  
pin-count package which occupies less board space and ultimately lowers total system costs. The  
SST25VF016B devices are enhanced with improved operating frequency and even lower power con-  
sumption than the original SST25VFxxxA devices. SST25VF016B SPI serial flash memories are man-  
ufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell  
design and thick-oxide tunneling injector attain better reliability and manufacturability compared with  
alternate approaches.  
The SST25VF016B devices significantly improve performance and reliability, while lowering power  
consumption. The devices write (Program or Erase) with a single power supply of 2.7-3.6V for  
SST25VF016B. The total energy consumed is a function of the applied voltage, current, and time of  
application. Since for any given voltage range, the SuperFlash technology uses less current to pro-  
gram and has a shorter erase time, the total energy consumed during any Erase or Program operation  
is less than alternative flash memory technologies.  
The SST25VF016B device is offered in both 8-lead SOIC (200 mils) and 8-contact WSON (6mm x  
5mm) packages. See Figure 2 for pin assignments.  
©2011 Silicon Storage Technology, Inc.  
S71271-04-000  
01/11  
2