16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Preliminary Specifications
AC CHARACTERISTICS
TABLE 16: READ CYCLE TIMING PARAMETERS VDD = 2.7-3.6V
SST39VFxx01/xx02-70
SST39VFxx01/xx02-90
Symbol
TRC
Parameter
Min
Max
Min
Max
Units
ns
Read Cycle Time
70
90
TCE
Chip Enable Access Time
Address Access Time
70
70
35
90
90
45
ns
TAA
ns
TOE
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
RST# Pulse Width
ns
1
TCLZ
0
0
0
0
ns
1
TOLZ
ns
1
TCHZ
20
20
30
30
ns
1
TOHZ
ns
1
TOH
0
0
ns
1
TRP
500
50
500
50
ns
1
TRHR
RST# High before Read
RST# Pin Low to Read Mode
ns
1,2
TRY
20
20
µs
T16.3 1223
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase and Program operations.
This parameter does not apply to Chip-Erase operations.
TABLE 17: PROGRAM/ERASE CYCLE TIMING PARAMETERS
Symbol Parameter
Min
Max
Units
µs
TBP
Word-Program Time
10
TAS
Address Setup Time
Address Hold Time
WE# and CE# Setup Time
WE# and CE# Hold Time
OE# High Setup Time
OE# High Hold Time
CE# Pulse Width
0
30
0
ns
TAH
ns
TCS
ns
TCH
TOES
TOEH
TCP
0
ns
0
ns
10
40
40
30
30
30
0
ns
ns
TWP
WE# Pulse Width
ns
1
TWPH
WE# Pulse Width High
CE# Pulse Width High
Data Setup Time
ns
1
TCPH
TDS
ns
ns
1
TDH
Data Hold Time
ns
1
TIDA
Software ID Access and Exit Time
Sector-Erase
150
25
ns
TSE
ms
ms
TBE
Block-Erase
25
TSCE
Chip-Erase
50
ms
T17.1 1223
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2003 Silicon Storage Technology, Inc.
S71223-03-000
11/03
14
SST [ SILICON STORAGE TECHNOLOGY, INC ]
