W191
Absolute Maximum Ratings[3]
rating only. Operation of the device at these or any other condi-
tions above those specified in the operating sections of this
specification is not implied. Maximum conditions for extended
periods may affect reliability.
Stresses greater than those listed in this table may cause
permanent damage to the device. These represent a stress
Parameter
VDDQ3, VIN
TSTG
TB
Description
Voltage on any pin with respect to GND
Storage Temperature
Rating
Unit
V
–0.5 to + 7.0
–65 to + 150
–55 to + 125
0 to + 70
°C
°C
°C
°C
Ambient Temperature under Bias
Operating Temperature (Commercial)
Operating Temperature (Industrial)
TA
TA
–40 to + 85
DC Electrical Characteristics: TA = 0°C to +70°C (Commercial), VDDQ3 = 3.3V 5%,TA = –40°C to +85°C (Industrial),
V
DDQ3 = 3.3V 5% [4]
Parame-
ter
Description
Test Condition
BUF_IN = 100 MHz
BUF_IN = 100 MHz
Min.
Typ.
173
5
Max.
Unit
mA
mA
IDD
IDD
3.3V Supply Current
3.3V Supply Current in three-state
Logic Inputs (BUF_IN, OE, SCLOCK, SDATA)
VIL
Input Low Voltage
GND–0.3
2.0
0.8
VDDQ3+0.5
+5
V
V
VIH
Input High Voltage
IILEAK
IILEAK
Input Leakage Current, BUF_IN
Input Leakage Current[5]
–5
µA
µA
–20
+5
Logic Outputs (SDRAM0:5)
VOL
VOH
IOL
Output Low Voltage
Output High Voltage
Output Low Current
Output High Current
IOL = 1 mA
IOH = –1 mA
VOL = 1.5V
VOH = 1.5V
50
mV
V
3.1
65
70
100
110
160
185
mA
mA
IOH
Pin Capacitance/Inductance
CIN Input Pin Capacitance (Except BUF_IN)
5
6
7
pF
pF
nH
COUT
Output Pin Capacitance
Input Pin Inductance
LIN
Notes:
3. Multiple supplies: The voltage on any input or I/O pin cannot exceed the power pin during power-up. Power supply sequencing is NOT required.
4. Outputs loaded by 6” 60 transmission lines with 20 pF capacitors.
5. OE, SCLOCK, and SDATA logic pins have a 250-k: internal pull-up resistor (not CMOS level).
:
Rev 1.0,November 20, 2006
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