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S71GL064A80BAI0F3 参数 Datasheet PDF下载

S71GL064A80BAI0F3图片预览
型号: S71GL064A80BAI0F3
PDF下载: 下载PDF文件 查看货源
内容描述: 堆叠式多芯片产品( MCP )闪存和RAM [Stacked Multi-Chip Product (MCP) Flash Memory and RAM]
分类和应用: 闪存
文件页数/大小: 102 页 / 1762 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
program operation. Refer to the Write Operation Status section for more  
information.  
In the erase-suspend-read mode, the system can also issue the autoselect com-  
mand sequence. Refer to the “Autoselect Mode” section on page 31 and  
“Autoselect Command Sequence” section on page 45 sections for details.  
To resume the sector erase operation, the system must write the Erase Resume  
command. Further writes of the Resume command are ignored. Another Erase  
Suspend command can be written after the chip has resumed erasing.  
Note:During an erase operation, this flash device performs multiple internal operations which are invisible to the system. When an  
erase operation is suspended, any of the internal operations that were not fully completed must be restarted. As such, if this flash  
device is continually issued suspend/resume commands in rapid succession, erase progress will be impeded as a function of the  
number of suspends. The result will be a longer cumulative erase time than without suspends. Note that the additional suspends do  
not affect device reliability or future performance. In most systems rapid erase/suspend activity occurs only briefly. In such cases,  
erase performance will not be significantly impacted  
.
March 31, 2005 S71GL032A_00_A0  
S71GL032A Based MCPs  
55  
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