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S71GL064A80BAI0F3 参数 Datasheet PDF下载

S71GL064A80BAI0F3图片预览
型号: S71GL064A80BAI0F3
PDF下载: 下载PDF文件 查看货源
内容描述: 堆叠式多芯片产品( MCP )闪存和RAM [Stacked Multi-Chip Product (MCP) Flash Memory and RAM]
分类和应用: 闪存
文件页数/大小: 102 页 / 1762 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
START  
Read DQ7–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
No  
DQ5 = 1?  
Yes  
Read DQ7–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
PASS  
FAIL  
Notes:  
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector  
being erased. During chip erase, a valid address is any non-protected sector address.  
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.  
Figure 7. Data# Polling Algorithm  
RY/BY#: Ready/Busy#  
The RY/BY# is a dedicated, open-drain output pin which indicates whether an  
Embedded Algorithm is in progress or complete. The RY/BY# status is valid after  
the rising edge of the final WE# pulse in the command sequence. Since RY/BY#  
is an open-drain output, several RY/BY# pins can be tied together in parallel with  
a pull-up resistor to VCC  
.
If the output is low (Busy), the device is actively erasing or programming. (This  
includes programming in the Erase Suspend mode.) If the output is high (Ready),  
the device is in the read mode, the standby mode, or in the erase-suspend-read  
mode. Table 23 shows the outputs for RY/BY#.  
58  
S71GL032A Based MCPs  
S71GL032A_00_A0 March 31, 2005  
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