欢迎访问ic37.com |
会员登录 免费注册
发布采购

S71GL064A80BAI0F3 参数 Datasheet PDF下载

S71GL064A80BAI0F3图片预览
型号: S71GL064A80BAI0F3
PDF下载: 下载PDF文件 查看货源
内容描述: 堆叠式多芯片产品( MCP )闪存和RAM [Stacked Multi-Chip Product (MCP) Flash Memory and RAM]
分类和应用: 闪存
文件页数/大小: 102 页 / 1762 K
品牌: SPANSION [ SPANSION ]
 浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第37页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第38页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第39页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第40页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第42页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第43页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第44页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第45页  
A d v a n c e I n f o r m a t i o n  
Table 19. System Interface String  
Addresses  
(x16)  
Data  
Description  
VCC Min. (write/erase)  
D7–D4: volt, D3–D0: 100 millivolt  
1Bh  
1Ch  
0027h  
VCC Max. (write/erase)  
D7–D4: volt, D3–D0: 100 millivolt  
0036h  
1Dh  
1Eh  
1Fh  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
0000h  
0000h  
0007h  
0007h  
000Ah  
0000h  
0001h  
0005h  
0004h  
0000h  
VPP Min. voltage (00h = no VPP pin present)  
VPP Max. voltage (00h = no VPP pin present)  
Reserved for future use  
Typical timeout for Min. size buffer write 2N  
µs (00h = not supported)  
Typical timeout per individual block erase 2N ms  
Typical timeout for full chip erase 2N ms (00h = not supported)  
Reserved for future use  
Max. timeout for buffer write 2N times typical  
Max. timeout per individual block erase 2N times typical  
Max. timeout for full chip erase 2N times typical (00h = not supported)  
Note: CFI data related to V and time-outs may differ from actual V and time-outs of the product. Please consult the Ordering  
CC  
CC  
Information tables to obtain the V range for particular part numbers. Please consult the Erase and Programming Performance table  
CC  
for typical timeout specifications.  
March 31, 2005 S71GL032A_00_A0  
S71GL032A Based MCPs  
41  
 复制成功!