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S71GL064A80BAI0F3 参数 Datasheet PDF下载

S71GL064A80BAI0F3图片预览
型号: S71GL064A80BAI0F3
PDF下载: 下载PDF文件 查看货源
内容描述: 堆叠式多芯片产品( MCP )闪存和RAM [Stacked Multi-Chip Product (MCP) Flash Memory and RAM]
分类和应用: 闪存
文件页数/大小: 102 页 / 1762 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
Low V  
Write Inhibit  
CC  
When VCC is less than VLKO, the device does not accept any write cycles. This pro-  
tects data during VCC power-up and power-down. The command register and all  
internal program/erase circuits are disabled, and the device resets to the read  
mode. Subsequent writes are ignored until VCC is greater than VLKO. The system  
must provide the proper signals to the control pins to prevent unintentional writes  
when VCC is greater than VLKO  
.
Write Pulse “Glitch” Protection  
Noise pulses of less than 3 ns (typical) on OE#, CE# or WE# do not initiate a write  
cycle.  
Logical Inhibit  
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# =  
VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a  
logical one.  
Power-Up Write Inhibit  
If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept  
commands on the rising edge of WE#. The internal state machine is automatically  
reset to the read mode on power-up.  
March 31, 2005 S71GL032A_00_A0  
S71GL032A Based MCPs  
39  
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