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S29GL128P90FFIR10 参数 Datasheet PDF下载

S29GL128P90FFIR10图片预览
型号: S29GL128P90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存存储
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( P r e l i m i n a r y )  
7.7.5  
Erase Suspend/Erase Resume Commands  
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data  
from, or program data to, any sector not selected for erasure. The sector address is required when writing this  
command. This command is valid only during the sector erase operation, including the minimum tSEA time-out  
period during the sector erase command sequence. The Erase Suspend command is ignored if written during  
the chip erase operation.  
When the Erase Suspend command is written during the sector erase operation, the device requires a  
maximum of 20 µs (5 µs typical) to suspend the erase operation. However, when the Erase Suspend  
command is written during the sector erase time-out, the device immediately terminates the time-out period  
and suspends the erase operation.  
After the erase operation has been suspended, the device enters the erase-suspend-read mode. The system  
can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all  
sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status  
information on DQ7-DQ0. The system can use DQ7, or DQ6, and DQ2 together, to determine if a sector is  
actively erasing or is erase-suspended. Refer to Table 7.35 for information on these status bits.  
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read  
mode. The system can determine the status of the program operation using write operation status bits, just as  
in the standard program operation.  
In the erase-suspend-read mode, the system can also issue the Autoselect command sequence. Refer to  
Write Buffer Programming on page 26 and the Autoselect on page 21 for details.  
To resume the sector erase operation, the system must write the Erase Resume command. The address of  
the erase-suspended sector is required when writing this command. Further writes of the Resume command  
are ignored. Another Erase Suspend command can be written after the chip has resumed erasing.  
Software Functions and Sample Code  
Table 7.10 Erase Suspend  
(LLD Function = lld_EraseSuspendCmd)  
Cycle  
Operation  
Byte Address  
Word Address  
Data  
1
Write  
Base + XXXh  
Base + XXXh  
00B0h  
The following is a C source code example of using the erase suspend function. Refer to the Spansion Low  
Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash  
memory software development guidelines.  
/* Example: Erase suspend command */  
*( (UINT16 *)base_addr ) = 0x00B0;  
/* write suspend command  
*/  
Table 7.11 Erase Resume  
(LLD Function = lld_EraseResumeCmd)  
Cycle  
Operation  
Byte Address  
Word Address  
Sector Address  
Data  
1
Write  
Sector Address  
0030h  
The following is a C source code example of using the erase resume function. Refer to the Spansion Low  
Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash  
memory software development guidelines.  
/* Example: Erase resume command */  
*( (UINT16 *)sector_addr ) = 0x0030;  
/* write resume command  
*/  
/* The flash needs adequate time in the resume state */  
November 8, 2007 S29GL-P_00_A7  
S29GL-P MirrorBit® Flash Family  
33  
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