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S29GL128P90FFIR10 参数 Datasheet PDF下载

S29GL128P90FFIR10图片预览
型号: S29GL128P90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存存储
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
 浏览型号S29GL128P90FFIR10的Datasheet PDF文件第25页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第26页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第27页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第28页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第30页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第31页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第32页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第33页  
D a t a S h e e t ( P r e l i m i n a r y )  
Figure 7.2 Write Buffer Programming Operation  
Write Unlock Cycles:  
Address 555h, Data AAh  
Address 2AAh, Data 55h  
Unlock Cycle 1  
Unlock Cycle 2  
Issue  
Write Buffer Load Command:  
Address SA, Data 25h  
Load Word Count to Program  
Program Data to Address:  
SA, wc  
wc = number of words – 1  
Yes  
Confirm command:  
wc = 0?  
No  
SA = 0x29h  
Perform Polling Algorithm  
(see Write Operation Status  
flowchart)  
Write Next Word,  
Decrement wc:  
wc = wc – 1  
No  
Write Buffer  
Abort Desired?  
Yes  
Yes  
Polling Status  
Write to a Different  
Sector Address to Cause  
Write Buffer Abort  
= Done?  
No  
No  
Error?  
Yes  
Yes  
Write Buffer  
Abort?  
No  
RESET. Issue Write Buffer  
Abort Reset Command  
PASS. Device is in  
read mode.  
FAIL. Issue reset command  
to return to read array mode.  
November 8, 2007 S29GL-P_00_A7  
S29GL-P MirrorBit® Flash Family  
29  
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