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S29GL128P90FFIR10 参数 Datasheet PDF下载

S29GL128P90FFIR10图片预览
型号: S29GL128P90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存存储
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( P r e l i m i n a r y )  
Figure 7.3 Sector Erase Operation  
Write Unlock Cycles:  
Address 555h, Data AAh  
Address 2AAh, Data 55h  
Unlock Cycle 1  
Unlock Cycle 2  
Write Sector Erase Cycles:  
Address 555h, Data 80h  
Address 555h, Data AAh  
Address 2AAh, Data 55h  
Sector Address, Data 30h  
Command Cycle 1  
Command Cycle 2  
Command Cycle 3  
Specify first sector for erasure  
Select  
Additional  
Sectors?  
No  
Yes  
Write Additional  
Sector Addresses  
• Each additional cycle must be written within tSEA timeout  
• The host system may monitor DQ3 or wait tSEA to ensure  
acceptance of erase commands  
• No limit on number of sectors  
Yes  
Last Sector  
Selected?  
No  
• Commands other than Erase Suspend or selecting additional  
sectors for erasure during timeout reset device to reading array  
data  
Poll DQ3.  
DQ3 = 1?  
No  
Yes  
Perform Write Operation  
Status Algorithm  
(see Figure 7.4)  
Status may be obtained by reading DQ7, DQ6 and/or DQ2.  
Yes  
Done?  
No  
No  
Error condition (Exceeded Timing Limits)  
DQ5 = 1?  
Yes  
PASS. Device returns  
to reading array.  
FAIL. Write reset command  
to return to reading array.  
Notes  
1. See Table 12.1 on page 68 for erase command sequence.  
2. See DQ3: Sector Erase Timeout State Indicator on page 39 for information on the sector erase timeout.  
November 8, 2007 S29GL-P_00_A7  
S29GL-P MirrorBit® Flash Family  
31  
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