D a t a S h e e t
AC Characteristics
Alternate CE# Controlled Erase and Program Operations-
S29GL128N, S29GL256N, S29GL512N
Parameter
Speed Options
90
JEDEC
tAVAV
Std.
tWC
tAS
Description
Write Cycle Time (Note 1)
(Note 6)
100
110
110
Unit
ns
Min
Min
90
100
110
110
tAVWL
Address Setup Time
0
15
45
0
ns
Address Setup Time to OE# low during toggle bit
polling
TASO
tAH
Min
Min
Min
ns
ns
ns
tELAX
Address Hold Time
Address Hold Time From CE# or OE# high during
toggle bit polling
tAHT
tDVEH
tEHDX
tDS
tDH
Data Setup Time
Data Hold Time
Min
Min
Min
Min
45
0
ns
ns
ns
ns
tCEPH CE# High during toggle bit polling
tOEPH OE# High during toggle bit polling
20
20
Read Recovery Time Before Write
tGHEL
tGHEL
Min
0
ns
(OE# High to WE# Low)
tWLEL
tEHWH
tELEH
tEHEL
tWS
tWH
tCP
WE# Setup Time
Min
Min
Min
Min
Typ
0
0
ns
ns
ns
ns
µs
WE# Hold Time
CE# Pulse Width
35
30
240
tCPH
CE# Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program
Per Word
Typ
15
µs
Operation (Notes 2, 4)
Effective Accelerated Write Buffer
Program Operation (Notes 2, 4)
tWHWH1 tWHWH1
Per Word
Word
Typ
Typ
Typ
Typ
13.5
60
µs
µs
Program Operation (Note 2)
Accelerated Programming
Operation (Note 2)
Word
54
µs
tWHWH2 tWHWH2 Sector Erase Operation (Note 2)
0.5
sec
Notes:
1. Not 100% tested.
2. See AC Characteristics‚ on page 77 for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 90 ns, 100ns, and 110 ns speed options are tested with V = V
IO
CC
= 3 V. AC specifications for 110 ns speed options are tested with V = 1.8 V and V = 3.0 V.
IO
CC
6. 90 ns speed option only applicable to S29GL128N and S29GL256N.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
85
SPANSION [ SPANSION ]
