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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
 浏览型号S29GL128N11TAIV10的Datasheet PDF文件第84页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第85页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第86页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第87页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第89页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第90页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第91页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第92页  
D a t a S h e e t  
AC Characteristics  
555 for program  
PA for program  
2AA for erase  
SA for sector erase  
555 for chip erase  
Data# Polling  
Addresses  
PA  
tWC  
tWH  
tAS  
tAH  
WE#  
OE#  
tGHEL  
tWHWH1 or 2  
tCP  
CE#  
Data  
tWS  
tCPH  
tDS  
tBUSY  
tDH  
DQ7#  
DOUT  
tRH  
A0 for program  
55 for erase  
PD for program  
30 for sector erase  
10 for chip erase  
RESET#  
RY/BY#  
Notes:  
1. Figure indicates last two bus cycles of a program or erase operation.  
2. PA = program address, SA = sector address, PD = program data.  
3. DQ7# is the complement of the data written to the device. D  
written to the device.  
is the data  
OUT  
Figure 20. Alternate CE# Controlled Write (Erase/Program)  
Operation Timings  
86  
S29GL-N MirrorBit™ Flash Family  
S29GL-N_00_B3 October 13, 2006  
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