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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
AC Characteristics  
Hardware Reset (RESET#)  
Parameter  
JEDEC  
Std.  
Description  
Speed (Note 2)  
Unit  
RESET# Pin Low (During Embedded Algorithms)  
to Read Mode (Note 1)  
tReady  
Max  
Max  
20  
ns  
RESET# Pin Low (NOT During Embedded  
Algorithms) to Read Mode (Note 1)  
tReady  
500  
ns  
tRP  
tRH  
tRPD  
tRB  
RESET# Pulse Width  
Reset High Time Before Read (Note 1)  
RESET# Low to Standby Mode  
RY/BY# Recovery Time  
Min  
Min  
Min  
Min  
500  
50  
20  
0
ns  
ns  
µs  
ns  
Notes:  
1. Not 100% tested. If ramp rate is equal to or faster than 1V/100µs with a falling edge of the RESET# pin initiated, the RESET# pin needs to  
be held low only for 100µs for power-up.  
2. Next generation devices may have different reset speeds. To increase system design considerations, please refer to the “Advance  
Information on S29GL-P Hardware Reset (RESET#) and Power-up Sequence” section for advance reset speeds on S29GL-P devices.  
RY/BY#  
CE#, OE#  
tRH  
RESET#  
tRP  
tReady  
Reset Timings NOT during Embedded Algorithms  
Reset Timings during Embedded Algorithms  
tReady  
RY/BY#  
tRB  
CE#, OE#  
RESET#  
tRP  
tRH  
Figure 13. Reset Timings  
S29GL-N_00_B3 October 13, 2006  
S29GL-N MirrorBit™ Flash Family  
79  
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