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S29GL256M10TAIR10 参数 Datasheet PDF下载

S29GL256M10TAIR10图片预览
型号: S29GL256M10TAIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
Table 32. Command Definitions (x8 Mode, BYTE# = VIL)  
Bus Cycles (Notes 2–5)  
Command  
Sequence  
(Note 1)  
First  
Second  
Third  
Fourth  
Fifth  
Sixth  
Addr Data  
Addr  
Data  
Addr  
Data  
Addr  
Data  
Addr Data Addr Data  
Read (Note 6)  
Reset (Note 7)  
Manufacturer ID  
1
1
4
RA  
RD  
F0  
XXX  
AAA  
AA  
555  
555  
55  
55  
AAA  
AAA  
90  
90  
X00  
X02  
01  
7E  
(Note  
17)  
(Note  
17)  
Device ID (Note 9)  
4
4
AAA  
AAA  
AA  
AA  
X1C  
X1E  
SecSi‰ Sector Factory  
Protect (Note 10)  
555  
555  
55  
55  
AAA  
AAA  
90  
90  
X06  
(Note 10)  
00/01  
Sector Group Protect Verify  
(Note 12)  
4
AAA  
AA  
(SA)X04  
Enter SecSi Sector Region  
Exit SecSi Sector Region  
Write to Buffer (Note 11)  
Program Buffer to Flash  
3
4
3
1
AAA  
AAA  
AAA  
SA  
AA  
AA  
AA  
29  
555  
555  
555  
55  
55  
55  
AAA  
AAA  
SA  
88  
90  
25  
XXX  
SA  
00  
BC  
PA  
PD  
WBL  
PD  
Write to Buffer Abort Reset (Note  
13)  
3
AAA  
AA  
555  
55  
AAA  
F0  
Chip Erase  
6
6
AAA  
AAA  
AA  
AA  
555  
555  
55  
55  
AAA  
AAA  
80  
80  
AAA  
AAA  
AA  
AA  
555  
555  
55  
55  
AAA  
SA  
10  
30  
Sector Erase  
Program/Erase Suspend (Note  
14)  
1
XXX  
B0  
Program/Erase Resume (Note  
15)  
1
1
XXX  
AA  
30  
98  
CFI Query (Note 16)  
Legend:  
X = Don’t care  
RA = Read Address of memory location to be read.  
PD = Program Data for location PA. Data latches on rising edge of  
WE# or CE# pulse, whichever happens first.  
SA = Sector Address of sector to be verified (in autoselect mode) or  
erased. Address bits A21–A15 uniquely select any sector.  
WBL = Write Buffer Location. Address must be within same write  
buffer page as PA.  
RD = Read Data read from location RA during read operation.  
PA = Program Address. Addresses latch on falling edge of WE# or  
CE# pulse, whichever happens later.  
BC = Byte Count. Number of write buffer locations to load minus 1.  
Notes:  
1. See Table 1 for description of bus operations.  
2. All values are in hexadecimal.  
3. Shaded cells indicate read cycles. All others are write cycles.  
4. During unlock and command cycles, when lower address bits are  
555 or AAA as shown in table, address bits above A11 are don’t  
care.  
10. If WP# protects highest address sector, data is 98h for factory  
locked and 18h for not factory locked. If WP# protects lowest  
address sector, data is 88h for factory locked and 08h for not  
factor locked.  
11. Data is 00h for an unprotected sector group and 01h for a  
protected sector group.  
12. Total number of cycles in command sequence is determined by  
number of bytes written to write buffer. Maximum number of  
cycles in command sequence is 37, including “Program Buffer to  
Flash” command.  
13. Command sequence resets device for next command after  
aborted write-to-buffer operation.  
14. System may read and program in non-erasing sectors, or enter  
autoselect mode, when in Erase Suspend mode. Erase Suspend  
command is valid only during a sector erase operation.  
15. Erase Resume command is valid only during Erase Suspend  
mode.  
5. Unless otherwise noted, address bits A21–A11 are don’t cares.  
6. No unlock or command cycles required when device is in read  
mode.  
7. Reset command is required to return to read mode (or to erase-  
suspend-read mode if previously in Erase Suspend) when device  
is in autoselect mode, or if DQ5 goes high while device is  
providing status information.  
8. Fourth cycle of autoselect command sequence is a read cycle.  
Data bits DQ15–DQ8 are don’t care. See Autoselect Command  
Sequence section or more information.  
9. Device ID must be read in three cycles.  
16. Command is valid when device is ready to read array data or  
when device is in autoselect mode.  
17. Refer to Table 14, AutoSelect Codes for individual Device IDs  
per device density and model number.  
114  
S29GLxxxM MirrorBitTM Flash Family  
S29GLxxxM_00A5 April 30, 2004  
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