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MBM29DL163BE-70TN 参数 Datasheet PDF下载

MBM29DL163BE-70TN图片预览
型号: MBM29DL163BE-70TN
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存的CMOS 16M ( 2M ×8 / 1M ×16 )位双操作 [FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 76 页 / 1048 K
品牌: SPANSION [ SPANSION ]
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MBM29DL16XTE/BE70/90  
(5) Sector Group Protection Algorithm  
Start  
Setup Sector Group Addr.  
(A19, A18, A17, A16, A15, A14, A13, A12)  
PLSCNT = 1  
OE  
=
VID, A9  
VIL, RESET  
A0 VIL, A1  
=
VID,  
VIH  
VIH  
CE  
=
=
=
=
A6  
=
Activate WE Pulse  
Time out 100 µs  
Increment PLSCNT  
WE  
= V IH, CE = OE = V IL  
(A 9 should remain V ID  
)
Read from Sector Group  
(Addr. = SPA, A1  
A6 V0 VIL) *  
=
VIH,  
=
=
No  
No  
PLSCNT = 25?  
Data = 01h?  
Yes  
Yes  
Yes  
Remove VID from A9  
Write Reset Command  
Protect Another Sector  
Group ?  
No  
Device Failed  
Remove VID from A9  
Write Reset Command  
Sector Group Protection  
Completed  
* : A-1 is VIL on byte mode.  
68  
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