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MBM29DL163BE-70TN 参数 Datasheet PDF下载

MBM29DL163BE-70TN图片预览
型号: MBM29DL163BE-70TN
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存的CMOS 16M ( 2M ×8 / 1M ×16 )位双操作 [FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 76 页 / 1048 K
品牌: SPANSION [ SPANSION ]
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MBM29DL16XTE/BE70/90  
(2) Embedded EraseTM Algorithm  
EMBEDDED ALGORITHMS  
Start  
Write Erase  
Command Sequence  
(See below)  
Data Polling  
Embedded  
Program  
Algorithm  
in program  
No  
Data = FFh  
?
Yes  
Erasure Completed  
Individual Sector/Multiple Sector  
Erase Command Sequence  
(Address/Command):  
Chip Erase Command Sequence  
(Address/Command):  
555h/AAh  
2AAh/55h  
555h/80h  
555h/AAh  
2AAh/55h  
555h/10h  
555h/AAh  
2AAh/55h  
555h/80h  
555h/AAh  
2AAh/55h  
Sector Address/30h  
Sector Address/30h  
Additional sector  
erase commands  
are optional.  
Sector Address/30h  
Notes : The sequence is applied for × 16 mode.  
The addresses differ from × 8 mode.  
65  
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