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MBM29DL163BE-70TN 参数 Datasheet PDF下载

MBM29DL163BE-70TN图片预览
型号: MBM29DL163BE-70TN
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存的CMOS 16M ( 2M ×8 / 1M ×16 )位双操作 [FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 76 页 / 1048 K
品牌: SPANSION [ SPANSION ]
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MBM29DL16XTE/BE70/90  
(7) Extended Sector Group Protection Algorithm  
Start  
RESET = VID  
Wait to 4 µs  
Device is Operating in  
Temporary Sector Group  
Unprotection Mode  
No  
Extended Sector Group  
Protection Entry?  
Yes  
To Setup Sector Group  
Protection Write XXXh/60h  
PLSCNT = 1  
To Sector Group Protection  
Write 60h to Sector Address  
(A6 = A0 = VIL, A1 = VIH)  
Time out 250 µs  
Increment PLSCNT  
Setup Next Sector Group  
Address  
To Verify Sector Group Protection  
Write 40h to Sector Address  
(A6 = A0 = VIL, A1 = VIH)  
Read from Sector Group  
Address (Addr. = SPA,  
A6 = A0 = VIL, A1 = VIH)  
No  
No  
PLSCNT = 25  
Yes  
?
Data = 01h?  
Yes  
Yes  
Protection Other Sector  
Group?  
Remove VID from RESET  
Write Reset Command  
No  
Device Failed  
Remove VID from RESET  
Write Reset Command  
Sector Group Protection  
Completed  
70  
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