MBM29DL16XTE/BE70/90
• Write/Erase/Program Operations
Symbol
70
90
Parameter
Unit
JEDEC Standard
Min Typ Max Min Typ Max
Write Cycle Time
tAVAV
tWC
tAS
70
0
90
0
ns
ns
Address Setup Time
tAVWL
Address Setup Time to OE Low During Toggle
Bit Polling
—
tWLAX
—
tASO
tAH
12
45
0
15
45
0
ns
ns
ns
Address Hold Time
Address Hold Time from CE or OE High During
Toggle Bit Polling
tAHT
Data Setup Time
Data Hold Time
tDVWH
tWHDX
tDS
tDH
30
0
35
0
ns
ns
Read
0
0
ns
Output Enable
Hold Time
—
tOEH
Toggle and Data Polling
10
20
20
0
10
20
20
0
ns
CE High During Toggle Bit Polling
OE High During Toggle Bit Polling
Read Recover Time Before Write
Read Recover Time Before Write
CE Setup Time
—
tCEPH
tOEPH
tGHWL
tGHEL
tCS
ns
—
ns
tGHWL
tGHEL
tELWL
tWLEL
tWHEH
tEHWH
tWLWH
tELEH
tWHWL
tEHEL
ns
0
0
ns
0
0
ns
WE Setup Time
tWS
0
0
ns
CE Hold Time
tCH
0
0
ns
WE Hold Time
tWH
0
0
ns
Write Pulse Width
tWP
35
35
25
25
35
35
30
30
ns
CE Pulse Width
tCP
ns
Write Pulse Width High
CE Pulse Width High
tWPH
tCPH
ns
ns
Byte
8
16
1
8
16
1
µs
Programming Operation
tWHWH1
tWHWH1
Word
µs
Sector Erase Operation*1
VCC Setup Time
tWHWH2
—
tWHWH2
tVCS
s
50
500
500
4
50
500
500
4
µs
Rise Time to VID *2
—
tVIDR
tVACCR
tVLHT
tWPP
tOESP
tCSP
ns
Rise Time to VACC*3
—
ns
Voltage Transition Time*2
Write Pulse Width*2
—
µs
—
100
4
100
4
µs
OE Setup Time to WE Active*2
CE Setup Time to WE Active *2
Recover Time From RY/BY
—
µs
µs
—
4
4
—
tRB
0
0
ns
(Continued)
48
SPANSION [ SPANSION ]
