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MBM29DL161TE-70TN 参数 Datasheet PDF下载

MBM29DL161TE-70TN图片预览
型号: MBM29DL161TE-70TN
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存的CMOS 16M ( 2M ×8 / 1M ×16 )位双操作 [FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 76 页 / 1048 K
品牌: SPANSION [ SPANSION ]
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MBM29DL16XTE/BE70/90  
(2) AC Waveforms for Hardware Reset/Read Operations  
tRC  
Address  
Address Stable  
tACC  
tRH  
CE  
tRP  
tRH  
tCE  
RESET  
Outputs  
tOH  
High-Z  
Output Valid  
(3) AC Waveforms for Alternate WE Controlled Program Operations  
Data Polling  
3rd Bus Cycle  
Address  
555h  
tWC  
PA  
PA  
tRC  
tAS  
tAH  
CE  
tCS  
tCH  
tCE  
OE  
tWP  
tDS  
tWPH  
tOE  
tGHWL  
tWHWH1  
WE  
tOH  
tDF  
tDH  
A0h  
PD  
DQ7  
DOUT  
DOUT  
Data  
Notes : PA is address of the memory location to be programmed.  
PD is data to be programmed at byte address.  
DQ7 is the output of the complement of the data written to the device.  
DOUT is the output of the data written to the device.  
Figure indicates the last two bus cycles out of four bus cycle sequence.  
These waveforms are for the × 16 mode. These address differ from × 8 mode.  
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