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MBM29DL161TE-70TN 参数 Datasheet PDF下载

MBM29DL161TE-70TN图片预览
型号: MBM29DL161TE-70TN
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存的CMOS 16M ( 2M ×8 / 1M ×16 )位双操作 [FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 76 页 / 1048 K
品牌: SPANSION [ SPANSION ]
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MBM29DL16XTE/BE70/90  
(Continued)  
Symbol  
70  
90  
Parameter  
Unit  
JEDEC Standard  
Min Typ Max Min Typ Max  
RESET Pulse Width  
tRP  
tRH  
500  
200  
500  
200  
ns  
ns  
ns  
ns  
ns  
ns  
µs  
µs  
RESET High Level Period Before Read  
BYTE Switching Low to Output High-Z  
BYTE Switching High to Output Active  
Program/Erase Valid to RY/BY Delay  
Delay Time from Embedded Output Enable  
Erase Time-out Time  
tFLQZ  
tFHQV  
tBUSY  
tEOE  
tTOW  
tSPD  
25  
70  
90  
70  
50  
20  
30  
90  
90  
90  
50  
20  
Erase Suspend Transition Time  
*1 : This does not include preprogramming time.  
*2 : This timing is for Sector Group Protection operation.  
*3 : This timing is limited for Accelerated Protection operation.  
ERASE AND PROGRAMMING PERFORMANCE  
Value  
Parameter  
Unit  
Comments  
Min  
Typ  
Max  
Excludes programming time  
prior to erasure  
Sector Erase Time  
1
10  
s
Word Programming Time  
Byte Programming Time  
16  
8
360  
300  
µs  
µs  
Excludes system-level  
overhead  
Excludes system-level  
overhead  
Chip Programming Time  
Program/Erase Cycle  
50  
s
100,000  
cycle  
49  
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