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AM29LV640MH112RPCI 参数 Datasheet PDF下载

AM29LV640MH112RPCI图片预览
型号: AM29LV640MH112RPCI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(4M ×16位/ 8的M× 8位)的MirrorBit 3.0伏特,只有统一部门快闪记忆体与VersatileI / O控制 [64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control]
分类和应用: 闪存内存集成电路
文件页数/大小: 62 页 / 1108 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
Table 6. Device Geometry Definition  
Addresses Addresses  
(x16)  
(x8)  
Data  
Description  
27h  
4Eh  
0017h  
Device Size = 2N byte  
28h  
29h  
50h  
52h  
0002h  
0000h  
Flash Device Interface description (refer to CFI publication 100)  
2Ah  
2Bh  
54h  
56h  
0005h  
0000h  
Max. number of byte in multi-byte write = 2N  
(00h = not supported)  
Number of Erase Block Regions within device (01h = uniform device, 02h = boot  
device)  
2Ch  
58h  
0001h  
2Dh  
2Eh  
2Fh  
30h  
5Ah  
5Ch  
5Eh  
60h  
007Fh  
0000h  
0000h  
0001h  
Erase Block Region 1 Information  
(refer to the CFI specification or CFI publication 100)  
31h  
32h  
33h  
34h  
62h  
64h  
66h  
68h  
0000h  
0000h  
0000h  
0000h  
Erase Block Region 2 Information (refer to CFI publication 100)  
Erase Block Region 3 Information (refer to CFI publication 100)  
Erase Block Region 4 Information (refer to CFI publication 100)  
35h  
36h  
37h  
38h  
6Ah  
6Ch  
6Eh  
70h  
0000h  
0000h  
0000h  
0000h  
39h  
3Ah  
3Bh  
3Ch  
72h  
74h  
76h  
78h  
0000h  
0000h  
0000h  
0000h  
December 14, 2005  
Am29LV640MH/L  
23  
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