欢迎访问ic37.com |
会员登录 免费注册
发布采购

AM29DL640H70WHI 参数 Datasheet PDF下载

AM29DL640H70WHI图片预览
型号: AM29DL640H70WHI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(8M ×8位/ 4米x 16位) CMOS 3.0伏只,同步读/写闪存 [64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 54 页 / 1243 K
品牌: SPANSION [ SPANSION ]
 浏览型号AM29DL640H70WHI的Datasheet PDF文件第18页浏览型号AM29DL640H70WHI的Datasheet PDF文件第19页浏览型号AM29DL640H70WHI的Datasheet PDF文件第20页浏览型号AM29DL640H70WHI的Datasheet PDF文件第21页浏览型号AM29DL640H70WHI的Datasheet PDF文件第23页浏览型号AM29DL640H70WHI的Datasheet PDF文件第24页浏览型号AM29DL640H70WHI的Datasheet PDF文件第25页浏览型号AM29DL640H70WHI的Datasheet PDF文件第26页  
Table 8. CFI Query Identification String  
Addresses  
Addresses  
(Word Mode)  
(Byte Mode)  
Data  
Description  
10h  
11h  
12h  
20h  
22h  
24h  
0051h  
0052h  
0059h  
Query Unique ASCII string “QRY”  
13h  
14h  
26h  
28h  
0002h  
0000h  
Primary OEM Command Set  
15h  
16h  
2Ah  
2Ch  
0040h  
0000h  
Address for Primary Extended Table  
17h  
18h  
2Eh  
30h  
0000h  
0000h  
Alternate OEM Command Set (00h = none exists)  
Address for Alternate OEM Extended Table (00h = none exists)  
19h  
1Ah  
32h  
34h  
0000h  
0000h  
Table 9. System Interface String  
Addresses  
Addresses  
(Word Mode)  
(Byte Mode)  
Data Description  
VCC Min. (write/erase)  
0027h  
1Bh  
1Ch  
36h  
38h  
D7–D4: volt, D3–D0: 100 millivolt  
VCC Max. (write/erase)  
0036h  
D7–D4: volt, D3–D0: 100 millivolt  
1Dh  
1Eh  
1Fh  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
3Ah  
3Ch  
3Eh  
40h  
42h  
44h  
46h  
48h  
4Ah  
4Ch  
0000h  
0000h  
0003h  
0000h  
0009h  
0000h  
0005h  
0000h  
0004h  
0000h  
VPP Min. voltage (00h = no VPP pin present)  
VPP Max. voltage (00h = no VPP pin present)  
Typical timeout per single byte/word write 2N µs  
Typical timeout for Min. size buffer write 2N µs (00h = not supported)  
Typical timeout per individual block erase 2N ms  
Typical timeout for full chip erase 2N ms (00h = not supported)  
Max. timeout for byte/word write 2N times typical  
Max. timeout for buffer write 2N times typical  
Max. timeout per individual block erase 2N times typical  
Max. timeout for full chip erase 2N times typical (00h = not supported)  
20  
Am29DL640H  
June 7, 2005  
 复制成功!