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AM29BL162CB70RZF 参数 Datasheet PDF下载

AM29BL162CB70RZF图片预览
型号: AM29BL162CB70RZF
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 1一M× 16位) CMOS 3.0伏只突发模式闪存 [16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory]
分类和应用: 闪存
文件页数/大小: 50 页 / 843 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
Table 6. Device Geometry Definition  
Addresses  
Data  
Description  
N
27h  
0015h  
Device Size = 2 byte  
28h  
29h  
0001h  
0000h  
Flash Device Interface description (refer to CFI publication 100)  
N
2Ah  
2Bh  
0000h  
0000h  
Max. number of bytes in multi-byte write = 2  
(00h = not supported)  
2Ch  
0004h  
Number of Erase Block Regions within device  
2Dh  
2Eh  
2Fh  
30h  
0000h  
0000h  
0040h  
0000h  
Erase Block Region 1 Information  
(refer to the CFI specification or CFI publication 100)  
31h  
32h  
33h  
34h  
0001h  
0000h  
0020h  
0000h  
Erase Block Region 2 Information  
Erase Block Region 3 Information  
Erase Block Region 4 Information  
35h  
36h  
37h  
38h  
0000h  
0000h  
0080h  
0003h  
39h  
3Ah  
3Bh  
3Ch  
0006h  
0000h  
0000h  
0004h  
Table 7. Primary Vendor-Specific Extended Query  
Data Description  
Addresses  
40h  
41h  
42h  
0050h  
0052h  
0049h  
Query-unique ASCII string “PRI”  
43h  
44h  
0031h  
0030h  
Major version number, ASCII  
Minor version number, ASCII  
Address Sensitive Unlock  
0 = Required, 1 = Not Required  
45h  
46h  
47h  
0000h  
0002h  
0001h  
Erase Suspend  
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write  
Sector Protect  
0 = Not Supported, X = Number of sectors in per group  
Sector Temporary Unprotect  
00 = Not Supported, 01 = Supported  
48h  
49h  
4Ah  
0001h  
0004h  
0000h  
Sector Protect/Unprotect scheme  
Simultaneous Operation  
00 = Not Supported, 01 = Supported  
Burst Mode Type  
4Bh  
4Ch  
0003h  
0000h  
00 = Not Supported, 01 = 4 word Linear Burst, 02 = 8 Word linear Burst,  
03 = 32 Word Linear Burst, 04 = 4 Word Interleave Burst  
Page Mode Type  
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page  
16  
Am29BL162C  
July 8, 2005