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AM29BDS640GBD9WSI 参数 Datasheet PDF下载

AM29BDS640GBD9WSI图片预览
型号: AM29BDS640GBD9WSI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(4M ×16位) CMOS 1.8伏只同步读/写,突发模式闪存 [64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory]
分类和应用: 闪存内存集成电路
文件页数/大小: 65 页 / 845 K
品牌: SPANSION [ SPANSION ]
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A D V A N C E I N F O R M A T I O N  
Unlock Bypass Command Sequence  
The unlock bypass feature allows the system to prima-  
rily program to a bank faster than using the standard  
program command sequence. The unlock bypass  
command sequence is initiated by first writing two  
unlock cycles. This is followed by a third write cycle  
containing the unlock bypass command, 20h. That  
bank then enters the unlock bypass mode. A two-cycle  
unlock bypass program command sequence is all that  
is required to program in this mode. The first cycle in  
this sequence contains the unlock bypass program  
command, A0h; the second cycle contains the program  
address and data. Additional data is programmed in  
the same manner. This mode dispenses with the initial  
two unlock cycles required in the standard program  
command sequence, resulting in faster total program-  
ming time. The host system may also initiate the chip  
erase and sector erase sequences in the unlock  
bypass mode. The erase command sequences are  
four cycles in length instead of six cycles. Table 14,  
“Command Definitions,” on page 29 shows the require-  
ments for the unlock bypass command sequences.  
START  
Write Erase  
Command Sequence  
Data Poll  
from System  
Embedded  
Erase  
algorithm  
in progress  
No  
Data = FFh?  
Yes  
Erasure Completed  
During the unlock bypass mode, only the Unlock  
Bypass Program, Unlock Bypass Sector Erase, Unlock  
Bypass Chip Erase, and Unlock Bypass Reset com-  
mands are valid. To exit the unlock bypass mode, the  
system must issue the two-cycle unlock bypass reset  
command sequence. The first cycle must contain the  
bank address and the data 90h. The second cycle  
need only contain the data 00h. The bank then returns  
to the read mode.  
Notes:  
1. See Table 14 for erase command sequence.  
2. See the section on DQ3 for information on the sector  
erase timer.  
Figure 2. Erase Operation  
The device offers accelerated program operations  
through the ACC input. When the system asserts VID  
on this input, the device automatically enters the  
Unlock Bypass mode. The system may then write the  
two-cycle Unlock Bypass program command  
sequence. The device uses the higher voltage on the  
ACC input to accelerate the operation.  
Chip Erase Command Sequence  
Chip erase is a six bus cycle operation. The chip erase  
command sequence is initiated by writing two unlock  
cycles, followed by a set-up command. Two additional  
unlock write cycles are then followed by the chip erase  
command, which in turn invokes the Embedded Erase  
algorithm. The device does not require the system to  
preprogram prior to erase. The Embedded Erase algo-  
rithm automatically preprograms and verifies the entire  
memory for an all zero data pattern prior to electrical  
erase. The system is not required to provide any con-  
trols or timings during these operations. Table 14,  
“Command Definitions,” on page 29 shows the address  
and data requirements for the chip erase command  
sequence.  
Figure 2 illustrates the algorithm for the program oper-  
ation. Refer to the Erase/Program Operations table in  
the AC Characteristics section for parameters, and  
Figure 21, “Asynchronous Program Operation Tim-  
ings,” on page 49 for timing diagrams.  
26  
Am29BDS640G  
October 31, 2002